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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4916 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display & color TV. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 7 A C I Collector Current- Continuous 14 A CM I Base Current- Continuous 3.5 A B Collector Power Dissipation P 50 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc Website isc & iscsemi is registered trademar