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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 15 A C I Base Current- Continuous 3 A B I Collector Current-Pulse 20 A CP Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 23 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor