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isc Silicon NPN Power Transistor 2SD1037 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 30 A C Collector Power Dissipation P 180 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1037 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V C