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isc Silicon NPN Power Transistor 2SD113 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 30 A C I Emitter Current-Continuous 30 A E I Base Current-Continuous 5 A B Collector Power Dissipation P 200 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power T