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isc Silicon NPN Power Transistor 2SD1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 4 A C I Collector Current-Peak 5 A CM I Collector Current-Surge 15 A C(surge) Collector Power Dissipation 1.8 @ T =25 a P W C Collector Power Dissipation 30 @ T =25 C T Junction Temperature 150 J Storage Temperature Range -45 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silic

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