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isc Silicon NPN Power Transistors 2SD1236L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB920L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 90 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 5 A C I Collector Current-Pulse 9 A CP Collector Power Dissipation 1.75 @ T =25 a P W C Collector Power Dissipation 30 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is regi