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isc Silicon NPN Power Transistors 2SD1238L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB922L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 90 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 12 A C I Collector Current-Pulse 20 A CP Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power T