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isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 1500 V CES V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 4 A C I Collector Current-Peak 15 A CP I Base Current-Peak 3.5 A BP Collector Power Dissipation 2.5 @ T = 25 a P W C Collector Power Dissipation 70 @ T = 25 C T Junction Temperature 130 J T Storage Temperature Range -55 130 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2S