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INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ529S FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -60 V DSS V Gate-Source Voltage 20 V GSS I Drain Current-Continuous -10 A D I Drain Current-Single Pulsed -40 A DM P Total Dissipation 20 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.2 /W Rth(ch-a) Channel-to-ambient thermal resistance 50 1 isc website www.iscsemi.cn isc