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INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF730A FEATURES Drain Current I =5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 400 V DSS V Gate-Source Voltage-Continuous 30 V GS Drain Current-Continuous@ TC=25 5.5 I A D Drain Current-continuous@ TC=100 3.5 I Drain Current-Single Plused 22 A DM P Total Dissipation @T =25 74 W D C T Max. Operating Junction Temperature 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,J