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IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB70N10S3L-12 PG-TO263-3-2 3N10L12 IPI70N10S3L-12 PG-TO262-3-1 3N10L12 IPP70N10S3L-12 PG-TO220-3-1 3N10L12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 70 A D C GS T =100 C, C 48 V =10 V1) GS I T =25 C 280 Pulsed drain current1) D,pulse C I =35A 410 mJ Avalanche energy, single pulse1) E AS D I Avalanche current, single pulse 70 A AS V