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PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically

 

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 2n6849 irff9130.pdf Проектирование, MOSFET, Мощность

 2n6849 irff9130.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6849 irff9130.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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