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AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFETs utilizes the latest processing techniques to S achieve low on-resistance per silicon area. This benefit com- D bined with the fast switching speed and ruggedized device de- G sign that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for TO-247AC use in Automotive and a wide variety of other applications. G D S Gate Drain Source Ordering Informa