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PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6m l 175 C Operating Temperature max. 22m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per S silicon area. Additional features of this design are a 175 C D junction operating temperature, fast switching speed and G improved repetitive avalanche rating . These features D-Pak combine to make this design an extremely efficient and AUIRFR2607Z reliable device for use in Automotive applications and a