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PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified * D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional S D features of this design are a 175 C junction operating G temperature, fast switching speed and improved repetitive D-Pak avalanche rating . These features combine to make this design AUIRFR2905Z an extremely efficient and reliable device for use in Automotive applications and a