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PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- S resistance per silicon area. Additional features of G this design are a 175 C junction operating tempera- D-Pak ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device GDS for use in Automotive applications and a wide variety Gate Drain Source o