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PD - 97597A AUTOMOTIVE GRADE AUIRFR4105 HEXFET Power MOSFET Features D V(BR)DSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 45m Dynamic dV/dT Rating G ID (Silicon Limited) 27A 175 C Operating Temperature Fast Switching ID (Package Limited) 20A S Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant D Automotive Qualified * S Description G D-Pak Specifically designed for Automotive applications, AUIRFR4105 this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit GDS combined with the fast switching speed and Gate Drain Source ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device