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PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- S S resistance per silicon area. Additional features of this D G G D-Pak design are a 175 C junction operating temperature, I-Pak AUIRFR4105Z fast switching speed and improved repetitive ava- AUIRFU4105Z lanche rating . These features combine to make this design an extremely efficient and reliable device for GDS use in Automotive applications and a