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PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET Power MOSFET D Features V(BR)DSS -55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.065 Dynamic dV/dT Rating G 175 C Operating Temperature Fast Switching S ID -31A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S Description S D G D G Specifically designed for Automotive applications, this Cellular D-Pak I-Pak Planar design of HEXFET Power MOSFETs utilizes the AUIRFR5305 AUIRFU5305 latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching GDS speed and ruggedized device design that HEXFET power Gate Drain Source MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive