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PD-96302A AUTOMOTIVE GRADE AUIRFR6215 HEXFET Power MOSFET Features P-Channel D V(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.295 G Fast Switching Fully Avalanche Rated S ID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications of HEXFET Power MOSFETs utilizes the latest processing S techniques to achieve low on-resistance per silicon area. D This benefit combined with the fast switching speed and G D-Pak ruggedized device design that HEXFET power MOSFETs AUIRFR6215 are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. GDS Gate Drain Source Absolute Maximum Ratings Stresses beyon