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AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 1.3m l Fast Switching max. 1.6m l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve D D D extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and S S D reliable device for use in Automotive and wide variety of other G G G applicat
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auirfs8408 auirfsl8408.pdf Проектирование, MOSFET, Мощность
auirfs8408 auirfsl8408.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
auirfs8408 auirfsl8408.pdf База данных, Инновации, ИМС, Транзисторы
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