Скачать даташит для auirfz44vzstrl:

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per S D silicon area. Additional features of this design are a 175 C G junction operating temperature, fast switching speed and D2Pak improved repetitive avalanche rating . These features com- AUIRFZ44VZS bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety GDS of other applications. Gat