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PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this G D-Pak design are a 175 C junction operating temperature, AUIRLR2905Z fast switching speed and improved repetitive ava- lanche rating . These features combine to make this design an extremely efficient and reliable device for GDS use in Automoti