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PD -94000 IRF7328 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21m @VGS = -10V -8.0A Dual P-Channel MOSFET 32m @VGS = -4.5V -6.8A Available in Tape & Reel Description 1 8 New trench HEXFET Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance 3 6 per silicon area. This benefit, combined with the S2 D2 ruggedized device design that HEXFET power 4 5 G2 D2 MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use SO-8 in battery and load management applications. Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25 C Continuous Drain Current, VGS @ -10V -8.0 ID @ TA = 70 C Continuous Drain Current, VGS @ -10V -6.4 A IDM Pulsed D