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PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous generations @VGE = 15V, IC = 24A E Optimized for power conversion; SMPS, UPS and welding n-channel Industry standard TO-247AC package Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25 C Continuous Collector