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IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C ( Limited by Leads) 75 A IC110 TC = 110 C 48 A G ICM TC = 25 C, 1ms 250 A (TAB) C E IA TC = 25 C 30 A EAS TC = 25 C 300 mJ TO-220 (IXGP) SSOA VGE = 15V, TVJ = 125 C, RG = 3 ICM = 100 A (RBSOA) Clamped Inductive Load @ 600V PC TC = 25 C 300 W (TAB) G C TJ -55 ... +150 C E TJM 150 C G = Gate C = Collector Tstg -55 ... +150 C E = Emitter TAB = Collector TL 1.6mm (0.062 in.) from Case for 10s 300 C Features TSOLD Plastic Body for 10 Second
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ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Проектирование, MOSFET, Мощность
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf База данных, Инновации, ИМС, Транзисторы
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