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SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=3V, IC=3A. _ E 3.2 0.2 + Low Saturation Voltage VCE(sat)=1.5V(Max.) at IC=3A. _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M MAXIMUM RATING (Ta=25 ) D D _ N 2.54 0.1 + _ P 6.8 0.1 + CHARACTERISTIC SYMBOL RATING UNIT _ Q 4.5 0.2 + _ + R 2.6 0.2 N N VCBO Collector-Base Voltage 100 V H S 0.5 Typ VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V 1. BASE 1 2 3 2. COLLECTOR IC Collector Current 7 A 3. EMITTER IB Base Current 0.2 A PC 30 W C