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SMD Type Transistors NPN Transistors 2SC4504 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 0.3 A Collector Current - Pulse ICP 0.6 0.5 Collector Power Dissipation PC W (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 Mounted on ceramic substrate of 250mm2X0.8mm Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA RBE= 20 V