Скачать даташит для 2sd1615:

SMD Type Transistors NPN Transistors 2SD1615 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Collector Current - Pulse (Note.1) ICP 2 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note.1 PW 10 ms, Duty cycle 20%. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 50 V Emitter - base breakdown voltage VEBO IE= 100 uA IC= 0 6 Collector-base c