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SMD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features TO-263 Unit mm Low Gate Charge Qg results in Simple Drive Requirement +0.2 4.57-0.2 +0.1 Improved Gate, Avalanche and High Reapplied dv/dt 1.27-0.1 Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance +0.1 0.1max 1.27-0.1 Improved Switching Speed with Low EMI +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current TC=25 ID 15 A Drain current-pulsed Idp 60 A Power dissipation 300 W PD Derate above 25 2 W/ Thermal Resistance Junction to Ambient R JA 62 /W Channel temperature Tch 175 Storage temperature Tstg -55to+175 1 www.kexin.com.cn +0.1 1.27 -0.1 5.60 +0.2 8.7 15.25 -0.