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BUZ905D MAGNA BUZ906D TEC MECHANICAL DATA Dimensions in mm P CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING P CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE TO 3 N CHANNEL ALSO AVAILABLE AS Pin 1 Gate Pin 2 Drain Case Source BUZ900D & BUZ901D DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) BUZ905D BUZ906D VDSX Drain Source Voltage -160V -200V VGSS Gate Source Voltage 14V ID Continuous Drain Current -16A ID(PK) Body Drain Diode -16A PD Total Power Dissipation @ Tcase = 25 C 250W Tstg Stor