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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Continuous TC = 25 C(1) ID 115 mAdc Drain Current Continuous TC = 100 C(1) ID 75 Drain Current Pulsed(2) IDM 800 Gate Source Voltage Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board,(3) TA = 25 C PD 225 mW Derate above 25 C 1.8 mW/ C Thermal Resistance, Junction to Ambient R JA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(4)