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DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage VCE(sat) 0.6 V (at IC = 3.0 A) Fast switching speed tf 0.5 s (at IC = 3.0 A) Wide base reverse-bias SOA VCEX(SUS) 150 V (at IC = 3.0 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Electrode Connection 1. Base (B) Parameter Symbol Ratings Unit 2. Collector (C) 3. Emitter (E) Collector to base voltage VCBO 150 V 4. Fin (collector) Collector to emitter voltage VCEO 100 V EIA SC-46 Emitter to base voltage VEBO 12 V EDEC TO-220AB IEC