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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor (in millimeter) designed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 56 m MAX. (VGS = 4 V, ID = 15 A) Low Ciss Ciss = 4120 pF TYP. Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage* VGSS(AC) m20 V 0.7 0.1 1.3 0.2 2.5 0.1 Gate to Source Voltage VGSS(DC) 20, 0 V 1.5 0.2 0.65 0.1 Drain Current (DC) ID(DC) m30 A 2.54 2.54 Drain Current (pulse)** ID(pulse) m120 A 1. Gate Total Power Dissipation (TC = 25 C) PT 35 W 2. Dr

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 2sj495.pdf Проектирование, MOSFET, Мощность

 2sj495.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sj495.pdf База данных, Инновации, ИМС, Транзисторы