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NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V CPU Power Delivery 30 V 58 A 14 m @4.5 V DC--DC Converters Low Side Switching D MAXIMUM RATINGS (TJ =25 C unless otherwise noted) Parameter Symbol Value Unit N--Channel Drain--to--Source Voltage VDSS 30 V G Gate--to--Source Voltage VGS 20 V Continuous Drain TA =25 C ID 11.5 A S Current (R JA) (Note 1) TA =85 C 9.0 4 Power Dissipation TA =25 C PD 2.0 W 4 (R JA) (Note 1) 4 Continuous Drain TA =25 C ID 9.0 A Current (R JA) (Note 2) TA =85 C 7.0 2 Steady 1 1 1 2 3 State 3 Power Dissipation TA =25 C PD 1.