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NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http //onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 90 mW @ 4.5 V 2.6 A Low VF Schottky Diode 30 V Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A This is a Pb-Free Device SCHOTTKY DIODE Applications VR Max VF Max IF Max DC-DC Converters 30 V 0.53 V 1.0 A Portable Devices like PDA s, Cellular Phones, and Hard Drives A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) D Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 12 V G N-Channel Steady State TA = 25 C ID 2.6 A Continuous Drain TA = 85 C 1.9 Current (Note 1) S K t 5 s TA = 25 C 2.9 N-Channel MOSFET Schottky Diode