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Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 120 V 1.27 1.27 Emitter to base voltage VEBO 7 V Peak collector current ICP 50 mA 1 2 3 1 Emitter Collector current IC 20 mA 2 Collector 3 Base Collector power dissipation PC 250 mW 2.54 0.15 JEDEC TO 92 Junction temperature Tj 150 C EIAJ SC 43A Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 50V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 50V, IB = 0 1 A