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Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to base voltage VCBO 900 V VCES 900 V 5.08 0.5 Collector to emitter voltage 1 2 3 VCEO 800 V 1 Base Emitter to base voltage VEBO 7 V 2 Collector 3 Emitter Peak collector current ICP 5 A TO 220 Full Pack Package(a) Collector current IC 3 A Base current IB 1 A Collector power TC=25 C 40 PC W dissipation Ta=25 C 2