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Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V 1.27 1.27 Collector to emitter voltage VCEO 150 V 2.54 0.15 Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA 1 Emitter Collector current IC 50 mA 2 Collector EIAJ SC 72 Collector power dissipation PC 300 mW 3 Base New S Type Package Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 1 A Coll