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Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 5 Wide safe oeration area (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol Rating Unit 5.45 0.3 10.9 0.5 Collector-base voltage (Emitter open) VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V 5 1 2 3 1 Base Emitter-base voltage (Collector open) VEBO 7 V 2 Collector Base current IB 3 A 3 Emitter EIAJ SC-94 Collector current IC 15 A TOP-3E-A1 Package Peak collector current * ICP 24 A Internal Connection Collector power dissipation PC 60 W C Ta = 25 C3 Junction temperature Tj 150 C B Storage t

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 2sc6012.pdf Проектирование, MOSFET, Мощность

 2sc6012.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc6012.pdf База данных, Инновации, ИМС, Транзисторы