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Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixing to the printed circuit board. 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 2.5 2.5 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1 Base Peak collector current ICP 8 A 2 Collector EIAJ SC 71 3 Emitter M Type Mold Package Collector current IC 5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C * Pri