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Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB939 and 2SB939A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.54 0.3 5.08 0.5 1 Base Absolute Maximum Ratings (TC=25 C) 1 2 3 2 Collector 3 Emitter Parameter Symbol Ratings Unit N Type Package Collector to 2SD1262 60 Unit mm VCBO V 8.5 0.2 3.4 0.3 base voltage 2SD1262A 80 6.0 0.3 1.0 0.1 Collector to 2SD1262 60 VCEO V emitter voltage 2SD1262A 80 Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A R0.5 0.8 0.1 Collector current IC 8 A R0.5 0 to 0.4