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Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB943 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V 5.08 0.5 1 2 3 Emitter to base voltage VEBO 7 V 1 Base Peak collector current ICP 6 A 2 Collector 3 Emitter Collector current IC 3 A TO 220 Full Pack Package(a) Collector power TC=25 C 30 PC W dissipation Ta=25 C 2 Junction temperature Tj 150 C Storage temperat