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2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tamb =25 C- - 60 V VGS gate-source voltage Tamb =25 C- - 20 V [1] ID drain current Tamb =25 C; - - 320 mA VGS =10V RDSon drain-source on-state Tj =25 C; - 1 1.6 resistance VGS =10V; ID = 500 mA [1] De