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PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for thermally demanding on-state resistance environments due to 175 C rating Suitable for logic level gate drive sources 1.3 Applications 12 V and 24 V loads General purpose power switching DC-to-DC convertors Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 C; Tj 175 C - - 55 V ID drain current Tmb =25