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Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 (Previous REJ03G1278-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note Marking is JG . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 3.1 A Drain peak current ID(Pulse) Note1 4.5 A Body - drain diode reverse drain current IDR 3.1 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Wh