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Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous REJ03G1497-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Notes Marking is KG . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 12 V Drain current ID 1.5 A Drain peak current ID(pulse) Note1 6 A Body - drain diode reverse drain current IDR 1.5 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s