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Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current IDNote4 12 A Drain peak current ID (pulse)Note1 36 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse)Note1 36 A Avalanche current IAPNote3 3 A Avalanche energy EARNote3 0.5 mJ Channel dissipation Pch Note2 30 W Channel to case thermal i