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Preliminary Datasheet RJL5015DPK REJ03G1912-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 27, 2010 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 22 A Drain peak current ID (pulse)Note1 66 A Body-drain diode reverse drain current IDR 22 A Body-drain diode reverse drain peak current IDR (pulse)Note1 66 A Avalanche current IAPNote3 7 A Avalanche energy EARNote3 2.7 mJ Channel dissipation Pch Note2 150 W Channel to case thermal