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Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Source 2 4. Drain 1 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 0.4 A Drain peak current ID (pulse)Note1 0.6 A Body-drain diode reverse drain current IDR 0.4 A Body-drain diode reverse drain peak current IDR (pulse)Note1 0.6 A Note2 Channel dissipation Pch 1.04 W Channel to case thermal impedance ch-c 120 C/W Channel temperature Tch 150 C Storage temperature Tstg